Testing for Enhanced Low Dose Rate Sensitivity and Reduced Low Dose Rate Sensitivity Bipolar Devices

A possible influence of location of the effective Fermi level in the forbidden gap of the surface base region on dose rate sensitivity of bipolar integrated circuits was described. Also, it is shown, that the position of the effective Fermi level leads to different behavior of bipolar devices during post-irradiation annealing at enhanced temperature. Experimental tests on dose rate sensitive devices were provided and discussed.