丝绸
丝素
单层
范德瓦尔斯力
材料科学
傅里叶变换红外光谱
纳米技术
分子
外延
原子力显微镜
开尔文探针力显微镜
红外线的
化学
化学工程
光学
图层(电子)
复合材料
物理
工程类
有机化学
作者
Chenyang Shi,Marlo Zorman,Xiao Zhao,Miquel Salmerón,Jim Pfaendtner,Xiang Yang Liu,Shuai Zhang,James J. De Yoreo
出处
期刊:Science Advances
[American Association for the Advancement of Science (AAAS)]
日期:2024-09-18
卷期号:10 (38)
被引量:2
标识
DOI:10.1126/sciadv.ado4142
摘要
Despite the promise of silk-based devices, the inherent disorder of native silk limits performance. Here, we report highly ordered two-dimensional silk fibroin (SF) films grown epitaxially on van der Waals (vdW) substrates. Using atomic force microscopy, nano–Fourier transform infrared spectroscopy, and molecular dynamics, we show that the films consist of lamellae of SF molecules that exhibit the same secondary structure as the nanocrystallites of native silk. Increasing the SF concentration results in multilayers that grow either by direct assembly of SF molecules into the lamellae or, at high concentrations, along a two-step pathway beginning with a disordered monolayer that then crystallizes. Scanning Kelvin probe measurements show that these films substantially alter the surface potential; thus, they provide a platform for silk-based electronics on vdW solids.
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