化学气相沉积
乙炔
材料科学
结晶度
增长率
碳纳米管
大气温度范围
化学工程
硅
碳纤维
氧化物
分析化学(期刊)
纳米技术
化学
复合材料
冶金
复合数
有机化学
几何学
数学
物理
气象学
工程类
作者
Cheol Jin Lee,Jeunghee Park,Yoon Huh,Jeong Yong Lee
标识
DOI:10.1016/s0009-2614(01)00680-7
摘要
Vertically aligned carbon nanotubes (CNTs) are grown on iron-deposited silicon oxide substrates by thermal chemical vapor deposition (CVD) of acetylene gas at the temperature range 750–950°C. As the growth temperature increases from 750°C to 950°C, the growth rate increases by four times and the average diameter also increases from 30 nm to 130 nm while the density decreases by a factor of about two. The relative amount of crystalline graphitic sheets increases progressively with the growth temperature and a higher degree of crystalline perfection can be achieved at 950°C. This result demonstrates that the growth rate, diameter, density, and crystallinity of CNT can be controlled with the growth temperature.
科研通智能强力驱动
Strongly Powered by AbleSci AI