神经形态工程学
记忆电阻器
计算机科学
终端(电信)
功率消耗
人工神经网络
功率(物理)
纳米技术
电子工程
材料科学
人工智能
工程类
物理
电信
量子力学
作者
Hui‐Kai He,Heming Huang,Rui Yang
标识
DOI:10.1002/9783527835317.ch1
摘要
Memristive devices have recently garnered significant attention to closely mimic synaptic and neuron functions for neuromorphic computing due to their prominent advantages, including simple structure, low power consumption, and rich resistive switching dynamics. In this chapter, we will introduce the device structure, materials, and switching behaviors of memristive devices. Also, the switching mechanisms mainly related to formation/rupture of conductive filaments and modulation of interfacial barrier will be described in detail to help understand the switching dynamics of memristive devices. Then, state-of-art memristive synapses and neurons will be discussed. Finally, experimental demonstrated memristive neural networks also will be briefly introduced here.
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