Indium-Tin-Oxide Thin-Film Transistors With High Field-Effect Mobility (129.5 cm2/V⋅s) and Low Thermal Budget (150 °C)

In this letter, we demonstrate high performance Indium-Tin-Oxide thin-film transistors (ITO TFTs) with low thermal budget of process temperature less than 150 °C and a record high peak field-effect mobility ( $\mu _{\text {eff}}{)}$ of 129.5 cm2/ $\text{V}\cdot \text{s}$ among any kind of oxide semiconductor (OS) based TFTs with sub-5 nm channel thickness. In addition, the TFTs realized in this work also achieve decent features in terms of other key figure-of-merits, such as high on/off ratio, low drain-induced-barrier-lowering (DIBL), and a small frequency dispersion of the capacitance-voltage (C-V) characteristics. With further benefit of an raised S/D structure and by scaling the channel length ( ${L}_{\text {CH}}{)}$ of the device down to 50 nm, it presents an extremely high on-state current ( ${I}_{\text {on}}{)}$ of $1260.9 ~\mu \text{A}/\mu \text{m}$ at a gate overdrive voltage ${V}_{\text {ov}}$ of 4 V and a moderate drain to source voltage ${V}_{\text {DS}}$ of 0.5 V as well as one of the best peak extrinsic transconductance ( ${G}_{\text {m, {ext}}}{)}$ of $458 ~\mu \text{S}/\mu \text{m}$ at a ${V}_{\text {DS}}$ of 0.5 V among OS-TFTs.