串联
钙钛矿(结构)
硅
材料科学
纳米晶硅
纳米晶材料
太阳能电池
聚合物太阳能电池
非晶硅
光电子学
晶体硅
分析化学(期刊)
纳米技术
化学
结晶学
有机化学
复合材料
作者
Bernd Stannowski,Luana Mazzarella,Yen‐Hung Lin,Simon Kirner,Anna Belen Morales-Vilches,Lars Korte,Steve Albrecht,Ed Crossland,Chris Case,Henry J. Snaith,Rutger Schlatmann
标识
DOI:10.1109/pvsc.2018.8547825
摘要
Silicon heterojunction solar cells are implemented as bottom cells in monolithic perovskite/silicon tandem solar cells. Commonly they are processed with a smooth front side to facilitate wet processing of the lead-halide perovskite cell on top. The inherent drawback of this design, namely, enhanced reflection of the cell, can be significantly reduced by replacing the amorphous or nanocrystalline silicon front side n layer of the silicon cell by a nanocrystalline silicon oxide n layer. It is deposited with the same commonly used plasma-enhanced chemical vapor deposition and can be tuned to feature opto-electrical properties for enhanced light coupling into the Si bottom cell, namely, low parasitic absorption and an intermediate refractive index of ~2.6. We demonstrate that a 80 - 100 nm thick layer results in 0.9 mA/cm 2 current gain in the bottom cell yielding tandem cells with a top cell + bottom cell total current above 39 mA/cm 2 . These first nc-SiO x :H-coupled tandem cells reach an efficiency >23.5 %.
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