原子层沉积
硅
图层(电子)
材料科学
等离子体
沉积(地质)
化学吸附
杂质
吸附
化学工程
分析化学(期刊)
纳米技术
光电子学
化学
物理化学
有机化学
物理
古生物学
生物
量子力学
沉积物
工程类
作者
Sungin Suh,Soojung Ryu,Seongjae Cho,Jun-Rae Kim,Seongkyung Kim,Cheol Seong Hwang,Hyeong Joon Kim
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:2015-12-15
卷期号:34 (1)
被引量:20
摘要
It has not been an easy task to deposit SiN at low temperature by conventional plasma-enhanced atomic layer deposition (PE-ALD) since Si organic precursors generally have high activation energy for adsorption of the Si atoms on the Si-N networks. In this work, in order to achieve successful deposition of SiN film at low temperature, the plasma processing steps in the PE-ALD have been modified for easier activation of Si precursors. In this modification, the efficiency of chemisorption of Si precursor has been improved by additional plasma steps after purging of the Si precursor. As the result, the SiN films prepared by the modified PE-ALD processes demonstrated higher purity of Si and N atoms with unwanted impurities such as C and O having below 10 at. % and Si-rich films could be formed consequently. Also, a very high step coverage ratio of 97% was obtained. Furthermore, the process-optimized SiN film showed a permissible charge-trapping capability with a wide memory window of 3.1 V when a capacitor structure was fabricated and measured with an insertion of the SiN film as the charge-trap layer. The modified PE-ALD process using the activated Si precursor would be one of the most practical and promising solutions for SiN deposition with lower thermal budget and higher cost-effectiveness.
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