钙钛矿(结构)
材料科学
量子点
二氧化锡
钝化
锆
图层(电子)
化学工程
电导率
悬空债券
能量转换效率
锡
纳米技术
光电子学
冶金
化学
硅
物理化学
工程类
作者
Yutao Li,Chenyu Zhao,Xinxuan Yang,Lili Yang,Maobin Wei,Huilian Liu,Xiaoyan Liu,Jinghai Yang,Fengyou Wang,Lili Yang
标识
DOI:10.1016/j.surfin.2023.103546
摘要
The electron transport layer (ETL) is a significant functional layer for enhancing the power conversion efficiency (PCE) and the environmental stability of perovskite solar cells (PSCs). Tin dioxide (SnO2), which has high conductivity and well-matched energy levels with perovskite films, is widely used as one of the most effective ETLs for PSCs. However, it is still a challenge to reduce the energy loss of the SnO2/perovskite interface, which is caused by the SnO2 quantum dots agglomeration due to its disordered surface charge and the SnO2/perovskite interface defects formed during their low-temperature processing. To address this issue, we herein synthesized zirconium acetate stabilized SnO2 (ZAS) quantum dots to terminate the Sn4+ at the SnO2 surface. This suppressed SnO2 agglomeration and formed a uniform film with enhanced conductivity, thereby reducing the SnO2/perovskite interface non-radiative recombination. Furthermore, the C=O and Zr4+ of ZAS could passivate the Pb2+ dangling bonds and uncoordinated I− of the perovskite buried surface, respectively. The energy level of the ZAS ETL showed a favorable match with MAPbI3, accelerating carrier transport and reducing energy loss. As a result, the optimized ZAS-based device achieved an outstanding PCE of 21.13 % and maintained 90 % of its initial PCE under ambient conditions (25 °C, 30–35 % humidity) after 1000 h. This study not only developed a novel ZAS ETL but also inspired us to focus on modifying the surface properties of single SnO2 quantum dots rather than that of the SnO2 film.
科研通智能强力驱动
Strongly Powered by AbleSci AI