硫系化合物
材料科学
纳米晶
半导体
带隙
光电子学
量子点
镁
纳米技术
纳米结构
冶金
作者
Chunyu Yu,Yibo Li,Xuerong Song,Sheng Wang,Jiajia Ning
标识
DOI:10.1002/adom.202401361
摘要
Abstract Magnesium chalcogenide with wide bandgap semiconductor is an important candidate for the next generation semiconductor for optoelectronic devices. Colloidal magnesium chalcogenide (MgS, MgSe, and MgTe) nanocrystals are produced with the colloidal method, showing the optoelectronic properties for wide bandgap semiconductors in the violet region. The shape and size of magnesium chalcogenide nanocrystals are precisely controlled via tuning the precursors and ligands. Magnesium chalcogenide are further deposited on ZnSe and ZnS quantum dots for shell materials to enhance fluorescence emission due to the wide bandgap and suitable lattice in magnesium chalcogenide. Magnesium chalcogenide in nanoscale exhibits the potential for wide‐band semiconductors and the shell materials to light‐emitting quantum dots.
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