Segregation behavior during silicon single-crystal growth from the melt

The dependence of the effective segregation coefficient (ke) on the growth rate (R) has been investigated by the necking method using phosphorous as an impurity in the silicon melt growth process. The investigations were carried out for two different growth orientations of the silicon crystal, 〈100〉 and 〈111〉. The coefficient increased with increasing growth rate for both crystal orientations. The behavior in the relatively lower growth rate region is explained by the BPS model. However, the coefficient in the higher growth rate region is larger than that expected by the BPS theory. Additionally, the critical growth rate (R*), where the value of the coefficient deviates from the theory, depends on the growing crystal orientation. The R* in the 〈111〉 crystal is lower (∼0.5 mm/min) than that in the 〈100〉 crystal (∼3.0 mm/min).