材料科学
激光阈值
光电子学
电致发光
量子点
激光器
二极管
光子学
量子点激光器
半导体激光器理论
纳米技术
图层(电子)
光学
物理
波长
作者
Namyoung Ahn,Young‐Shin Park,Clément Livache,Jun Du,Kıvanç Güngör,Jaehoon Kim,Victor I. Klimov
标识
DOI:10.1002/adma.202206613
摘要
Laser diodes based on solution-processable materials can benefit numerous technologies including integrated electronics and photonics, telecommunications, and medical diagnostics. An attractive system for implementing these devices is colloidal semiconductor quantum dots (QDs). The progress towards a QD laser diode has been hampered by rapid nonradiative Auger decay of optical-gain-active multicarrier states, fast device degradation at high current densities required for laser action, and unfavorable competition between optical gain and optical losses in a multicomponent device stack. Here we resolve some of these challenges and demonstrate optically excited lasing from fully functional high-current density electroluminescent (EL) devices with an integrated optical resonator. This advance has become possible due to excellent optical gain properties of continuously graded QDs and a refined device architecture, which allows for highly efficient light amplification in a thin, EL-active QD layer.
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