High‐Uniformity, Shape‐Controlled Silicon Nanowires for Enhanced Performance in Optoelectronic Devices

Abstract Silicon nanowires (Si NWs) have attracted considerable interest owing to their distinctive properties, which render them promising candidates for a wide range of advanced applications in electronics, photonics, energy storage, and sensing. However, challenges in achieving large‐scale production, high uniformity, and shape control limit their practical use. This study presents a novel fabrication approach combining nanoimprint lithography, nanotransfer printing, and metal‐assisted chemical etching to produce highly uniform and shape‐controlled Si NW arrays. By optimizing the process parameters, Si NWs with various diameters (100, 200, and 400 nm) are successfully fabricated on 6‐inch wafers, achieving high uniformity confirmed through statistical and surface reflection analyses. Furthermore, a conformal coating of titanium nitride on the uniform Si NWs enables broadband absorption with average absorption of 75% in the wavelength range from 250 to 2500 nm, demonstrating their potential for next‐generation optoelectronic devices. These findings provide valuable insights for the scalable production of Si NWs and their integration into high‐performance electronic systems.