Bright InP Quantum Dots by Mid-Synthetic Modification with Zinc Halides

化学 量子点 光致发光 卤化物 配体(生物化学) 半最大全宽 量子产额 纳米技术 化学工程 光电子学 有机化学 荧光 光学 材料科学 物理 工程类 受体 生物化学
作者
Hui‐Ling Hu,Hao Hao,Xue Ren,Zhe-Yong Chen,Meng Liu,Yi Liu,Feng‐Lei Jiang
出处
期刊:Inorganic Chemistry [American Chemical Society]
卷期号:62 (6): 2877-2886 被引量:8
标识
DOI:10.1021/acs.inorgchem.2c04308
摘要

InP quantum dots (QDs) attract growing interest in recent years, owing to their environmental advantages upon applications in display and lighting. However, compared to Cd-based QDs and Pb-based perovskites, the synthesis of InP QDs with high optical quality is relatively more difficult. Here, we established a mid-synthetic modification approach to improve the optical properties of InP-based QDs. Tris(dimethylamino)phosphine ((DMA)3P) and indium iodide were used to prepare InP QDs with a green emission (∼527 nm). By introducing zinc halides (ZnX2) during the mid-synthetic process, the photoluminescence quantum yield (PLQY) of the resulting InP/ZnSeS/ZnS core/shell/shell QDs was increased to >70%, and the full-width-at-half-maximum (FWHM) could be narrowed to ∼40 nm. Transmission electron microscopy clearly showed the improvement of the QDs particle size distribution after introducing ZnX2. It was speculated that ZnX2 was bound to the surface of QDs as a Z-type ligand, which not only passivated surface defects and suppressed the emission of defect states but also prevented Ostwald ripening. The InP cores were also activated by ZnX2, which made the growth of the ZnSeS shell more favorable. The photoluminescence properties started to be improved significantly only when the amount of ZnX2 exceeded 0.5 mmol. As the amount increased, more ZnX2 was distributed around the QDs to form a ligand layer, which prevented the shell precursor from crossing the ligand layer to the surface of the InP core, thus reducing the size of the InP/ZnSeS/ZnS QDs. This work revealed a new role of ZnX2 and found a method for InP QDs with high brightness and low FWHM by the mid-synthetic modification, which would inspire the synthesis of even better InP QDs.
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