CMOS芯片
纳米电子学
纳米技术
晶体管
数码产品
纳米线
超大规模集成
平版印刷术
电子线路
量子细胞自动机
材料科学
逻辑门
计算机科学
纳米尺度
电子工程
电气工程
工程类
光电子学
细胞自动机
电压
算法
作者
Jing Huang,M. Momenzadeh,Fabrizio Lombardi
出处
期刊:IEEE Design & Test of Computers
[Institute of Electrical and Electronics Engineers]
日期:2007-04-01
卷期号:24 (4): 304-311
被引量:33
摘要
Conventional lithography-based vlsi technology (mostly using CMOS) has been extremely successful in the deep-submicron region. As CMOS approaches its fundamental physical limits (as evidenced by ultra thin gate oxides, short channel effects, and so on), researchers have begun investigating new technologies at extremely small feature sizes (such as nanoscale below 45 nm) for manufacturing future electronic and computing systems. This article presents the basic principles of some emerging nanoscale technologies, with emphasis on novel devices and their implementation. We also highlight manufacturing issues and basic features in terms of performance, current state of development, and limitations to present a basic, yet comprehensive, overview of emerging technologies for nanoscale electronics. New devices proposed by researchers include carbon nanotubes, silicon nanowires, quantum-dot cellular automata (QCA), single-electron transistors, resonant tunneling diodes, and single-molecule devices.
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