薄脆饼
材料科学
硅
氢
Crystal（编程语言）
投影（关系代数）
晶体缺陷
曲面（拓扑）
单晶
分子物理学
结晶学
光学
光电子学
几何学
化学
物理
计算机科学
有机化学
程序设计语言
数学
算法
出处
期刊：Chinese Physics
[Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences]
日期：1984-01-01
卷期号：33 (5): 694-694
摘要
Distribution of defects caused by hydrogen in silicon single crystals is investigated by means of X-ray projection topography. It has been observed that the defect density and its size in new exposure surface area are similar to those in the crystal interior, which are different from those observed in thin wafer. These results are discussed briefly.
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