Ice‐Enabled Transfer of Graphene on Copper Substrates Enhanced by Electric Field and Cu2O

Abstract Graphene films grown by the chemical vapor deposition (CVD) method suffer from contamination and damage during transfer. Herein, an innovative ice‐enabled transfer method under an applied electric field and in the presence of Cu 2 O (or Cu 2 O‐Electric‐field Ice Transfer, abbreviated as CEIT) is developed. Ice serves as a pollution‐free transfer medium while water molecules under the electric field fully wet the graphene surface for a bolstered adhesion force between the ice and graphene. Cu 2 O is used to reduce the adhesion force between graphene and copper. The combined methodology in CEIT ensures complete separation and clean transfer of graphene, resulting in successfully transferred graphene to various substrates, including polydimethylsiloxane (PDMS), Teflon, and C 4 F 8 without pollution. The graphene obtained via CEIT is utilized to fabricate field‐effect transistors with electrical performances comparable to that of intrinsic graphene characterized by small Dirac points and high carrier mobility. The carrier mobility of the transferred graphene reaches 9090 cm 2 V −1 s −1 , demonstrating a superior carrier mobility over that from other dry transfer methods. In a nutshell, the proposed clean and efficient transfer method holds great potential for future applications of graphene.