材料科学
薄膜晶体管
氧化物
晶体管
数码产品
光电子学
纳米技术
电介质
场效应晶体管
半导体
氧化物薄膜晶体管
电气工程
电压
冶金
工程类
图层(电子)
作者
Wangying Xu,Hao Li,Jianbin Xu,Lei Wang
标识
DOI:10.1021/acsami.7b16010
摘要
Solution-processed metal oxide thin-film transistors (TFTs) are considered as one of the most promising transistor technologies for future large-area flexible electronics. This work surveys the recent advances in solution-processed metal oxide TFTs, including n-type oxide semiconductors, oxide dielectrics, and p-type oxide semiconductors. We first deliver a review on the history and present status of metal oxide TFTs. Then, we present the recent progress in solution-processed n-type oxide semiconductors, with a special focus on low-temperature and large-area solution-based approaches as well as emerging nondisplay applications. Next, we give a detailed analysis of the state-of-the-art solution-processed oxide dielectrics for low-power electronics. We further discuss the recent advances in solution-based p-type oxide semiconductors, which will enable the highly desirable future low-cost large-area complementary circuits. Finally, we draw conclusions and outline the perspectives over the research field.
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