Spatial Identification of Mott–Schottky Effect at Electrocatalytic Pd/Metal Oxide Interfaces for the Oxygen Reduction Reaction

To elucidate the microstructure and charge transfer behavior at the interface of Pd/metal oxide semiconductor (MOS) catalysts and systematically explore the crucial role of the Mott-Schottky effect in the oxygen reduction reaction (ORR) electrocatalysis process, this study established a testing system for spatially identifying Mott-Schottky effects and electronic properties at Pd/MOS interfaces, leveraging highly sensitive Kelvin probe force microscopy (KPFM). This system enabled visualization and quantification of the surface potential difference and Mott-Schottky barrier height (Φ