溶剂化
密度泛函理论
隐溶剂化
纳米晶
工作(物理)
化学物理
材料科学
化学
分子
纳米技术
计算化学
统计物理学
物理
热力学
量子力学
作者
Kiran Mathew,Ravishankar Sundararaman,Kendra Letchworth‐Weaver,T. A. Arias,Richard G. Hennig
摘要
Solid-liquid interfaces are at the heart of many modern-day technologies and provide a challenge to many materials simulation methods. A realistic first-principles computational study of such systems entails the inclusion of solvent effects. In this work we implement an implicit solvation model that has a firm theoretical foundation into the widely used density-functional code VASP. The implicit solvation model follows the framework of joint density functional theory. We describe the framework, our algorithm and implementation, and benchmarks for small molecular systems. We apply the solvation model to study the surface energies of different facets of semiconducting and metallic nanocrystals and the S$_{\text{N}} 2$ reaction pathway. We find that solvation reduces the surface energies of the nanocrystals, especially for the semiconducting ones and increases the energy barrier of the S$_{\text{N}} 2$ reaction.
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