Ultra‐Confined Phonon Polaritons and Strongly Coupled Microcavity Exciton Polaritons in Monolayer MoSi2N4 and WSi2N4

Abstract The 2D semiconductors are an ideal platform for exploration of bosonic fluids composed of coupled photons and collective excitations of atoms or excitons, primarily due to large excitonic binding energies and strong light‐matter interaction. Based on first‐principles calculations, it is demonstrated that the phonon polaritons formed by two infrared‐active phonon modes in monolayer MoSi 2 N 4 and WSi 2 N 4 possess ultra‐high confinement factors of around ≈10 5 and 10 3 , surpassing those of conventional polaritonic thin‐film materials by two orders of magnitude. It is observed that the first bright exciton possesses a substantial binding energies of 750 and 740 meV in these two monolayers, with the radiative recombination lifetimes as long as 25 and 188 ns, and the Rabi splitting of the formed cavity‐exciton polaritons reaching 373 and 321 meV, respectively. The effective masses of the cavity exciton polaritons are approximately 10 −5 m e , providing the potential for high‐temperature quantum condensation. The ultra‐confined and ultra‐low‐loss phonon polaritons, as well as strongly‐coupled cavity exciton polaritons with ultra‐small polaritonic effective masses in these two monolayers, offering the flexible control of light at the nanoscale, probably leading to practical applications in nanophotonics, meta‐optics, and quantum materials.