铁电性
材料科学
双层
电容器
分析化学(期刊)
退火(玻璃)
电介质
光电子学
化学
复合材料
电压
膜
电气工程
色谱法
生物化学
工程类
作者
Takashi Onaya,Toshihide Nabatame,Mari Inoue,Yong Chan Jung,Heber Hernández-Arriaga,Jaidah Mohan,Harrison Sejoon Kim,Naomi Sawamoto,Takahiro Nagata,Jiyoung Kim,Atsushi Ogura
摘要
The ferroelectricity of metal–ferroelectric–metal capacitors with a ferroelectric HfxZr1−xO2/ZrO2 (HZO/ZO) bilayer thicker than 20 nm formed by atomic layer deposition and postdeposition annealing at 600 °C was investigated. The HZO/ZO capacitors exhibited a higher remanent polarization (2Pr = Pr+ − Pr−) and breakdown voltage (Vbd) than capacitors with a HfxZr1−xO2 (HZO) single layer. In particular, a HZO (15 nm)/ZO(10 nm) (HZ15Z10) capacitor exhibited excellent Vbd and 2Pr values of 6.7 V and 14 μC/cm2, respectively, which are much higher than those (4.3 V and 10 μC/cm2, respectively) for a HZO (15 nm) (HZ15) capacitor. The HZ15Z10 capacitor also exhibited higher endurance, a smaller wake-up effect (∼5%), and superior fatigue properties up to 108 switching cycles, compared to a HZ15 capacitor, which exhibited a large wake-up effect (∼15%) and large 2Pr degradation at 108 cycles. The wake-up behavior is attributed to domain depinning mainly related to the redistribution of oxygen vacancies and transformation from the nonferroelectric phase to the ferroelectric orthorhombic (O) phase during field cycling. The HZO/ZO bilayer grew a larger grain size with the ZO nucleation layer, which is twice as large as that of the HZO single layer, and the former structure exhibited more stable bulk-like ferroelectricity. Although the ferroelectric O phase in HZO decreased with increasing HZO thickness, the HZO/ZO structure had a larger fraction of the O phase than the HZO structure. Considering the manufacturing process of ferroelectric devices, these thick HZO/ZO bilayers are promising ferroelectric materials.
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