拉曼光谱
范德瓦尔斯力
堆积
二硫化钼
材料科学
格子(音乐)
图层(电子)
原子力显微镜
分子物理学
基质(水族馆)
凝聚态物理
分子振动
化学物理
结晶学
纳米技术
复合材料
化学
分子
光学
核磁共振
物理
地质学
有机化学
海洋学
声学
作者
Changgu Lee,Hugen Yan,L. E. Brus,Tony F. Heinz,James Hone,Sunmin Ryu
出处
期刊:ACS Nano
[American Chemical Society]
日期:2010-04-14
卷期号:4 (5): 2695-2700
被引量:1385
摘要
Molybdenum disulfide (MoS2) of single- and few-layer thickness was exfoliated on SiO2/Si substrate and characterized by Raman spectroscopy. The number of S−Mo−S layers of the samples was independently determined by contact-mode atomic force microscopy. Two Raman modes, E12g and A1g, exhibited sensitive thickness dependence, with the frequency of the former decreasing and that of the latter increasing with thickness. The results provide a convenient and reliable means for determining layer thickness with atomic-level precision. The opposite direction of the frequency shifts, which cannot be explained solely by van der Waals interlayer coupling, is attributed to Coulombic interactions and possible stacking-induced changes of the intralayer bonding. This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime.
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