钝化
兴奋剂
材料科学
掺杂剂
杂原子
化学气相沉积
费米能级
电阻率和电导率
电阻式触摸屏
电子结构
纳米技术
光电子学
无机化学
电子
化学
图层(电子)
计算化学
有机化学
戒指(化学)
工程类
物理
电气工程
量子力学
作者
Xiulian Fan,Luwei Zou,Wenlong Chu,Li Wang,Yu Zhou
摘要
Heteroatom doping and surface passivation for the nonlayered two-dimensional materials could tune their band structures for the application of electronic and optoelectronic devices. Herein, we report the exploration for a stable synthesis strategy of phosphorous doping in the nonlayered Cr2S3 nanoflakes via chemical vapor deposition. Single crystalline ultrathin P-doped Cr2S3 nanoflakes were achieved by tuning the hydrogen gas and sample–source distance, reaching a lateral size of 10–50 μm and a thickness down to 4 nm. The elemental characterization was confirmed with surface P-S and P-O bonds and bulk P-Cr bonds, indicating the surface passivation and lattice incorporation of P atoms. More importantly, the electrical resistivity of P-doped Cr2S3 nanoflakes was demonstrated to be 104 times compared to that of intrinsic Cr2S3, which could be explained by the liftup of Fermi level and surface passivation. Our work highlights phosphorous doping nonlayered Cr2S3 as tuning the electronic structure for achieving more intrinsic resistive samples. The heteroatom doping and surface passivation introduce a rational route for realizing the controllable electronic properties and provide more application potentials in the 2D electronic devices.
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