MESFET
光电子学
材料科学
欧姆接触
电子线路
跨导
钻石
与非门
阈值电压
逻辑门
制作
电气工程
晶体管
图层(电子)
电压
场效应晶体管
纳米技术
工程类
复合材料
医学
替代医学
病理
作者
A. Hokazono,Takefumi Ishikura,Kenichi Nakamura,Satoshi Yamashita,Hiroshi Kawarada
标识
DOI:10.1016/s0925-9635(96)00726-1
摘要
Using the p-type surface-conductive layer of diamond film, enhancement mode and depletion mode MESFETs have been fabricated by changing the metals of the gate electrode. The threshold voltages of MESFETs depend on the electronegativity of the metals. A MESFET with a Cr gate was operated in depletion mode and exhibited a peak transconductance of 12.3 mS mm−1, which is the highest in diamond FETs. This high performance can be obtained by a self-aligned gate fabrication process, which minimizes the spacing between the ohmic contacts and the Schottky contact. By utilizing an E-MESFET for the driver and a D-MESFET for the active load, E/D-type logic circuits such as NOT, NAND and NOR circuits have been fabricated for the first time.
科研通智能强力驱动
Strongly Powered by AbleSci AI