材料科学
薄膜
钼
厘米
纳米技术
比例(比率)
相(物质)
光电子学
冶金
化学
天文
量子力学
物理
有机化学
作者
Jin Cheol Park,Seok Joon Yun,Hyun Kim,Ji Hoon Park,Sang Hoon Chae,Sung Jin An,Jeong‐Gyun Kim,Soo Min Kim,Ki Kang Kim,Young Hee Lee
出处
期刊:ACS Nano
[American Chemical Society]
日期:2015-06-04
卷期号:9 (6): 6548-6554
被引量:245
标识
DOI:10.1021/acsnano.5b02511
摘要
We report the synthesis of centimeter-scale, uniform 1T'- and 2H-MoTe2 thin films via the tellurization of Mo thin films. 1T'-MoTe2 was initially grown and converted gradually to 2H-MoTe2 over a prolonged growth time under a Te atmosphere. Maintaining excessive Te was essential for obtaining the stable stoichiometric 2H-MoTe2 phase. Further annealing under a lower partial pressure of Te at the same temperature, followed by a rapid quenching, led to the reverse phase transition from 2H-MoTe2 to 1T'-MoTe2. The orientation of the 2H-MoTe2 film was determined by the tellurization rate. Slow tellurization was the key for obtaining a highly oriented 2H-MoTe2 film over the entire area, while fast tellurization led to a 2H-MoTe2 film with a randomly oriented c-axis.
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