记忆电阻器
材料科学
光电子学
制作
无定形固体
溅射
离子
薄膜
聚焦离子束
纳米技术
离子束
电子工程
化学
结晶学
医学
替代医学
有机化学
病理
工程类
作者
Amitesh Kumar,Mangal Das,Vivek Garg,Brajendra S. Sengar,Myo Than Htay,Shailendra Kumar,Abhinav Kranti,Shaibal Mukherjee
摘要
We report dual ion beam sputtering fabrication of an Al/ZnO/Al memristor displaying forming-free bipolar resistive switching characteristics with memristive behavior without necessitating any post-processing steps. A nearly amorphous ZnO thin film and an appropriate concentration of oxygen vacancies play a significant role in imparting forming-free, stable, and reliable behavior to memory cells. Besides, sufficient non-lattice oxygen ions in the film play a crucial role in the resistive switching process. The AlOx interface layer is observed to strongly affect the switching mechanism in the memory device by altering the barrier at the Al/ZnO interface. The device shows stable switching behavior for >250 cycles with good retention and stable set/reset voltages.
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