Two-dimensional α -In2Se3 memory devices from resistive switching to synaptic plasticity

We employ two-dimensional (2D) α-In2Se3 nanosheets and polymethyl methacrylate (PMMA) materials to develop three types of devices with different resistive switching (RS) layer structures and deeply study the electrical properties and physical mechanisms of these devices. It is confirmed that the pure 2D α-In2Se3 nanosheet-based RS device is a mode of ferroelectric regulation of the potential barrier, exhibiting memristor characteristics that can mimic the synaptic plasticity. Meanwhile, PMMA can improve the RS properties of the α-In2Se3 nanosheet-based device, including the appropriate switching ratio, narrow ratio distribution, and good endurance and retention capability, but the device's physical mechanism changes to charge trapping assisted hopping mechanism from the ferroelectric regulation of the potential barrier.