材料科学
薄膜晶体管
辐照
退火(玻璃)
光电子学
无定形固体
兴奋剂
半导体
铟
镨
分析化学(期刊)
纳米技术
化学
冶金
物理
有机化学
图层(电子)
色谱法
核物理学
作者
K. Zhang,Rihui Yao,Xiao Fu,Wei Cai,Y.Y. Li,Wei Xu,Zhenyu Wu,Cheng Luo,Honglong Ning,Junbiao Peng
标识
DOI:10.1088/1361-6463/ad0c06
摘要
Abstract Flexible displays have developed rapidly in recent years, low-temperature process to produce high performance amorphous oxide semiconductor devices are significant for the wide application of low-cost flexible display. In this work, praseodymium-doped indium zinc oxide semiconductor deposited by vacuum sputtering was irradiated with UV light before low-temperature thermal annealing. The treated semiconductor retains its characteristics of amorphous and high transparency to visible light. The carrier concentration and oxygen-related defects of the PrIZO films were significant changed under the superposition of UV irradiation and thermal annealing, the effects of UV light and thermal annealing can be well superimposed. The PrIZO-TFT that have been thermally annealed at 200 °C for 1 h after irradiated by UV light with power density of 175 mW cm −2 for 1800 s exhibit an optimal performance ( μ sat of 12.34 cm 2 V −1 ·s −1 , I on / I off of 3.8 × 10 8 , V th of 0.7 V, SS of 0.15 V/decade) and stability. The device performance broadens the application prospect of AOS TFT in low-cost flexible display.
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