纳米线
异质结
光探测
硫系化合物
材料科学
光电子学
半导体
响应度
无定形固体
纳米技术
红外线的
光电探测器
光学
化学
物理
结晶学
作者
Fengjing Liu,Xinming Zhuang,Mingxu Wang,Dongqing Qi,Shengpan Dong,SenPo Yip,Yanxue Yin,Jie Zhang,Zixu Sa,Kepeng Song,Longbing He,Yang Tan,You Meng,Johnny C. Ho,Lei Liao,Feng Chen,Zaixing Yang
标识
DOI:10.1038/s41467-023-43323-x
摘要
Abstract Growing high-quality core-shell heterostructure nanowires is still challenging due to the lattice mismatch issue at the radial interface. Herein, a versatile strategy is exploited for the lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires by simply utilizing the surfactant and amorphous natures of chalcogenide semiconductors. Specifically, a variety of III-V/chalcogenide core-shell heterostructure nanowires are successfully constructed with controlled shell thicknesses, compositions, and smooth surfaces. Due to the conformal properties of obtained heterostructure nanowires, the wavelength-dependent bi-directional photoresponse and visible light-assisted infrared photodetection are realized in the type-I GaSb/GeS core-shell heterostructure nanowires. Also, the enhanced infrared photodetection is found in the type-II InGaAs/GeS core-shell heterostructure nanowires compared with the pristine InGaAs nanowires, in which both responsivity and detectivity are improved by more than 2 orders of magnitude. Evidently, this work paves the way for the lattice-mismatch-free construction of core-shell heterostructure nanowires by chemical vapor deposition for next-generation high-performance nanowire optoelectronics.
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