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Above-room Curie temperature and barrier-layer-dependent tunneling magnetoresistance in 1T-CrO2 monolayer based magnetic tunnel junctions

量子隧道 凝聚态物理 居里温度 磁电阻 单层 隧道磁电阻 材料科学 图层(电子) 阻挡层 铁磁性 居里 隧道效应 物理 磁场 纳米技术 量子力学
作者
Jie Liu,Huan Tang,Min Gan,Hong Chen,Xuan Shi,Hongkuan Yuan
出处
期刊:Physical Chemistry Chemical Physics [The Royal Society of Chemistry]
卷期号:24 (36): 22007-22015 被引量:1
标识
DOI:10.1039/d2cp01924h
摘要

van der Waals (vdW) heterostructures based on two-dimensional (2D) ferromagnetic materials hold great potential applications in spintronics. Using the density functional theory (DFT) method and first-principles quantum transport simulation, we studied the structures, magnetic properties and spin-resolved transport of 1T-CrO2 monolayer (ML) based vdW magnetic tunnel junctions (MTJs). Owing to a high Curie temperature (TC) of 392 K and a moderate magnetic anisotropy energy (MAE) of 94 μeV of the ferromagnetic 1T-CrO2 monolayer, Cu(111)|CrO2|nML-Gr|CrO2|Cu(111) MTJs were built. Our results reveal that their tunneling magnetoresistance (TMR) ratios are dependent on the number of Gr barrier layers within a working bias voltage of 1 V. For the thin barrier layers (n = 1-2), the maintained TMR ratios can reach a giant value of about 1 × 104%, while there appears a decreasing trend with the increasing bias voltage for thick Gr layers (n = 3-5). The barrier-layer-dependent phenomenon is attributed to the decreasing transmission magnitude with increasing bias voltage in a parallel configuration (PC), which is as small as that in an anti-parallel configuration (APC) eventually. Our results would provide some guidance for future experimental fabrications of these 2D materials based MTJs.
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