材料科学
光电子学
转换器
半导体
激光器
能量转换效率
偏移量(计算机科学)
带隙
半导体激光器理论
功率(物理)
光功率
光伏系统
光学
电气工程
物理
计算机科学
量子力学
程序设计语言
工程类
作者
S. Fafard,Denis Masson
出处
期刊:Photonics
[MDPI AG]
日期:2022-08-17
卷期号:9 (8): 579-579
被引量:21
标识
DOI:10.3390/photonics9080579
摘要
High-efficiency multijunction laser power converters are demonstrated for low temperature applications with an optical input at 808 nm. The photovoltaic power converting III-V semiconductor devices are designed with GaAs absorbing layers, here with 5 thin subcells (PT5), connected by transparent tunnel junctions. Unprecedented conversion efficiencies of up to 74.7% are measured at temperatures around 150 K. At temperatures around 77 K, a remarkably low bandgap offset value of Woc = 71 mV is obtained at an optical input intensity of ~7 W/cm2. At 77 K, the PT5 retains an efficiency of 65% with up to 0.3 W of converted output power.
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