Kinetic Monte Carlo Simulation of Electron-Induced Point Defects Annealing in Gallium Nitride

Isochronal and isothermal annealing simulation of electron-induced point defects in Gallium Nitride were conducted with Object Kinetic Monte Carlo. Two annealing stages different from annealing in metals were observed and the mechanism of annealing was analyzed. The results are helpful for modeling micro-structural evolution for Gallium Nitride material and Gallium Nitride based devices.