电致发光
光致发光
量子点
材料科学
发光二极管
光电子学
二极管
发光
猝灭(荧光)
纳米技术
荧光
光学
物理
图层(电子)
作者
Chaodan Pu,Xingliang Dai,Yufei Shu,Meiyi Zhu,Yunzhou Deng,Yizheng Jin,Xiaogang Peng
标识
DOI:10.1038/s41467-020-14756-5
摘要
Abstract Colloidal quantum dots are promising emitters for quantum-dot-based light-emitting-diodes. Though quantum dots have been synthesized with efficient, stable, and high colour-purity photoluminescence, inheriting their superior luminescent properties in light-emitting-diodes remains challenging. This is commonly attributed to unbalanced charge injection and/or interfacial exciton quenching in the devices. Here, a general but previously overlooked degradation channel in light-emitting-diodes, i.e., operando electrochemical reactions of surface ligands with injected charge carriers, is identified. We develop a strategy of applying electrochemically-inert ligands to quantum dots with excellent luminescent properties to bridge their photoluminescence-electroluminescence gap. This material-design principle is general for boosting electroluminescence efficiency and lifetime of the light-emitting-diodes, resulting in record-long operational lifetimes for both red-emitting light-emitting-diodes (T 95 > 3800 h at 1000 cd m −2 ) and blue-emitting light-emitting-diodes (T 50 > 10,000 h at 100 cd m −2 ). Our study provides a critical guideline for the quantum dots to be used in optoelectronic and electronic devices.
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