阴极发光
外延
光致发光
材料科学
光电子学
铟
Crystal(编程语言)
波长
金属有机气相外延
量子阱
相(物质)
光学
作者
Shin Yoshida,Kanako Shojiki,Hideto MIYAKE,Masahiro Uemukai,Tomoyuki TANIKAWA,Ryuji KATAYAMA
标识
DOI:10.35848/1347-4065/ac55e5
摘要
Abstract We investigated influences of mask pattern and crystal planes on the InGaN alloy composition in selective area metalorganic vapor phase epitaxy. Cathodoluminescence mapping confirmed that emission colors changed depending on the crystal plane. Photoluminescence spectroscopy showed that the emission wavelength red-shifted by increasing the mask width. By combining the difference of indium incorporation efficiency depending on the crystal plane and the lateral vapor phase diffusion effect, multiple quantum wells with different emission wavelengths of up to 106 nm were grown simultaneously in the microscale region.
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