石墨烯
纳米技术
化学气相沉积
材料科学
生化工程
工程类
作者
Yinghan Li,Kaixuan Zhou,Haina Ci,Jingyu Sun
出处
期刊:Chemsuschem
[Wiley]
日期:2023-07-26
卷期号:16 (21)
被引量:5
标识
DOI:10.1002/cssc.202300865
摘要
High-quality graphene obtained by chemical vapor deposition (CVD) technique holds significant importance in constructing innovative electronic and optoelectronic devices. Direct growth of graphene over target substrates readily eliminates cumbersome transfer processes, offering compatibility with practical application scenarios. Recent years have witnessed growing strategic endeavors in the preparation of transfer-free graphene with favorable quality. Nevertheless, timely review articles on this topic are still scarce. In this contribution, a systematic summary of recent advances in transfer-free synthesis of high-quality graphene on insulating substrates, with a focus on discussing synthetic strategies designed by elevating reaction temperature, confining gas flow, introducing growth promotor and regulating substrate surface is presented.
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