光刻胶
材料科学
反应性(心理学)
平版印刷术
极紫外光刻
阴极射线
电子束光刻
纳米技术
临界尺寸
表征(材料科学)
抵抗
光学
光电子学
电子
物理
病理
医学
替代医学
量子力学
图层(电子)
作者
Jiaxing Gao,Siliang Zhang,Xuewen Cui,Cong Xue,Xudong Guo,Rui Hu,Shuangqing Wang,Jinping Chen,Yi Li,Guoqiang Yang
标识
DOI:10.1002/admi.202300194
摘要
Abstract As the crucial dimension (CD) of logic circuits continues to shrink, the photoresist metrics, including resolution, line edge roughness, and sensitivity, are faced with significant challenges. Photoresists are indispensable in the integrated circuit manufacturing industry, and specifically in achieving smaller critical dimensions. In this study, the effects of two categories of photosensitive compounds on lithography performance are explored, through a series of sulfonium salt‐based photoacid generators (PAGs) with diverse reactivity and photodegradable nucleophiles (PDNs) with varying nucleophilicity. The detailed characterization and exposure experiments suggest that the reactive alterations of different PAGs are mostly associated with the amount of phenyl composed of cations in PAGs. The “PDN first, PAG second” strategy, which employs a combination of low reactivity PAG and high reactivity PDN and involves PDN decomposition first and PAG decomposition second in the electron beam lithography process, achieves high sensitivity (100–270 µC cm −2 ), high resolution (25 nm 1:1 line/space, L/S), and low line edge roughness (LER ≤ 3.3 nm) stripes. This approach outperforms conventional formulations and may provide a potentially effective and useful strategy to improve electron beam photoresists.
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