材料科学
异质结
次声
晶体管
场效应晶体管
光电子学
噪音(视频)
退火(玻璃)
低频
氮化硼
闪烁噪声
纳米技术
CMOS芯片
电气工程
噪声系数
放大器
物理
电压
复合材料
人工智能
工程类
天文
图像(数学)
计算机科学
声学
作者
Subhamoy Ghatak,Sumanta Mukherjee,Manish Jain,D. D. Sarma,Arindam Ghosh
出处
期刊:APL Materials
[American Institute of Physics]
日期:2014-09-01
卷期号:2 (9)
被引量:65
摘要
We report measurement of low frequency 1/f noise in molybdenum di-sulphide (MoS2) field-effect transistors in multiple device configurations including MoS2 on silicon dioxide as well as MoS2-hexagonal boron nitride (hBN) heterostructures. All as-fabricated devices show similar magnitude of noise with number fluctuation as the dominant mechanism at high temperatures and density, although the calculated density of traps is two orders of magnitude higher than that at the SiO2 interface. Measurements on the heterostructure devices with vacuum annealing and dual gated configuration reveals that along with the channel, metal-MoS2 contacts also play a significant role in determining noise magnitude in these devices.
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