超晶格
石墨烯
表征(材料科学)
场效应晶体管
材料科学
晶体管
光电子学
领域(数学)
凝聚态物理
纳米技术
物理
电压
量子力学
数学
纯数学
作者
Won Beom Choi,Yeong-Ho Son,Hangyeol Park,Yungi Jeong,Junhyeok Oh,Kenji Watanabe,Takashi Taniguchi,Joonho Jang
摘要
Graphene provides a unique platform for hosting high quality 2D electron systems. Encapsulating graphene with hexagonal boron nitride (hBN) to shield it from noisy environments offers the potential to achieve ultrahigh performance nanodevices, such as photodiodes and transistors. However, the absence of a bandgap at the Dirac point presents challenges for using this system as a useful transistor. In this study, we investigated the functionality of hBN-aligned monolayer graphene as a field effect transistor (FET). By precisely aligning the hBN and graphene, bandgaps open at the first Dirac point and at the hole-doped induced Dirac point via an interfacial moiré potential. To characterize this as a submicrometer scale FET, we fabricated a global bottom gate to tune the density of a conducting channel and a local top gate to switch off this channel. This demonstrated that the system could be tuned to an optimal on/off ratio regime by separately controlling the gates. These findings provide a valuable reference point for the further development of FETs based on graphene heterostructures.
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