Orientation‐Selective Memory Switching in Quasi‐1D NbSe3 Neuromorphic Device for Omnibearing Motion Detection

Abstract Intelligent neuromorphic hardware holds considerable promise in addressing the growing demand for massive real‐time data processing in edge computing. Resistive switching materials with intrinsic anisotropy and a compact design of non‐volatile memory devices with the capability of handling spatiotemporally reconstructed data is crucial to perform sophisticated tasks in complex application scenarios. In this study, an anisotropic resistive switching cell with a planar configuration based on lithiated NbSe 3 nanosheets is demonstrated. Benefitting from the highly aligned diffusive channel associated with a quasi‐1D van der Waals structure, the memristor patterned along NbSe 3 atomic chains presents robust memory switching behavior with superior stability, particularly the low set/reset voltages (0.4 V/−0.36 V) and extremely small standard deviation (0.041 V/0.051 V), among the best compared to state‐of‐the‐art devices. More importantly, unlike traditional resistive switching materials, anisotropic ion migration in NbSe 3 crystals leads to a high orientation selectivity in the conductance update. Custom‐designed neuromorphic hardware contributes to the implementation of omnibearing motion recognition for automatic pilot applications, yielding a high accuracy of 95.9% considering variations. This article presents a new strategy based on NbSe 3 crystals to develop a neuromorphic computing system with intelligent application scenarios.