阳极
兴奋剂
材料科学
电流(流体)
光电子学
半导体
功率(物理)
硅
缩小
电气工程
物理
计算机科学
电极
工程类
热力学
量子力学
程序设计语言
作者
S. Voß,H.‐J. Schulze,F.‐J. Niedernostheide
出处
期刊:International Symposium on Power Semiconductor Devices and IC's
日期:2010-06-06
卷期号:: 141-144
被引量:3
摘要
The temperature dependence of the anode-side current gain α pnp of IGBTs is an essential criterion for the minimization of the total power losses of power-semiconductor devices. We propose a new method to reduce this dependence by using field-stop zones that contain doping atoms with deep levels in the band gap of silicon. Furthermore, we demonstrate that a deep-level doping of the field-stop significantly reduces the temperature dependence of the turn-off losses.
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