Boron Diffusion Profile in Silicon and Data Analysis

On the basis of the assumption that a vacancy mechanism should operate during the boron diffusion in silicon, it has been suggested that the diffusion coefficient D would depend linearly on the boron concentration C, for C > n /SUB i/ . However, it has been shown recently that the high concentration profile, the diffusion depth, and the boron amount after the diffusion from a liquid BBr/sub 3/ source is well described in D about C.