电阻随机存取存储器
非易失性存储器
材料科学
闪存
铁电性
电介质
神经形态工程学
光电子学
氧化物
铪
纳米技术
高-κ电介质
随机存取存储器
铁电RAM
工程物理
计算机科学
电气工程
嵌入式系统
电压
计算机硬件
工程类
机器学习
冶金
锆
人工神经网络
作者
Writam Banerjee,Alireza Kashir,S. Kamba
出处
期刊:Small
[Wiley]
日期:2022-05-05
卷期号:18 (23)
被引量:94
标识
DOI:10.1002/smll.202107575
摘要
Hafnium oxide (HfO2 ) is one of the mature high-k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development of flash memory devices. In this review, the application of HfO2 in two main emerging nonvolatile memory technologies is surveyed, namely resistive random access memory and ferroelectric memory. How the properties of HfO2 equip the former to achieve superlative performance with high-speed reliable switching, excellent endurance, and retention is discussed. The parameters to control HfO2 domains are further discussed, which can unleash the ferroelectric properties in memory applications. Finally, the prospect of HfO2 materials in emerging applications, such as high-density memory and neuromorphic devices are examined, and the various challenges of HfO2 -based resistive random access memory and ferroelectric memory devices are addressed with a future outlook.
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