材料科学
异质结
磁滞
凝聚态物理
电荷(物理)
范德瓦尔斯力
传输(计算)
光电子学
分子
物理
计算机科学
量子力学
并行计算
作者
Jiadong Yao,Wenxuan Guo,Yali Liu,Xinyue Niu,Mengge Li,Xiaoxiang Wu,Ying Yu,Tianjian Ou,Jian Sha,Yewu Wang
摘要
We explored the hysteresis enlargement in the vertical MoS2/GeSe2 van der Waals heterojunction, and it was attributed to the gate induced charge transfer process between the MoS2 and GeSe2 layers.
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