材料科学
光电探测器
异质结
纳米片
光电子学
响应度
钙钛矿(结构)
紫外线
欧姆接触
氧化物
半导体
暗电流
光探测
纳米技术
化学工程
图层(电子)
工程类
冶金
作者
Tingting Yan,Xinya Liu,Xinyu Zhang,Enliu Hong,Limin Wu,Xiaosheng Fang
标识
DOI:10.1002/adfm.202311042
摘要
Abstract Ultraviolet (UV)‐sensitive semiconductors play a key role in converting UV light into electric signals in a UV photodetector. Two‐dimensional (2D) oxide perovskite, as a kind of green and stable semiconductor materials, exhibits excellent UV detection capabilities. However, the non‐dense nanosheet thin film induces alternative shunts in vertical‐structured devices results in high ohmic leakage currents. Large number of oxygen vacancies in 2D oxide perovskite leads to the adsorption / desorption process of oxygen molecules that slows down the device's response speed. Therefore, an inorganic–organic heterojunction that effectively fills up the pinholes in nanosheet films, effectively suppressing the dark current of the device by 100 000 times are designed. Meanwhile, the construction of inorganic–organic heterojunctions can accelerate the charge carriers’ transporting process, resulting in a fast rise / decay response time of 0.7 ms / 8.5 ms. Moreover, the inorganic–organic heterojunction endows the device with excellent self‐powered performance, presenting a high responsivity of 60 mA W −1 . This photodetector demonstrates application potential in a UV communication system with a detection angle of 30 degrees and a close‐range communication of 1.2 m.
科研通智能强力驱动
Strongly Powered by AbleSci AI