Two-dimensional MBenes with ordered metal vacancies for surface-enhanced Raman scattering

拉曼散射 材料科学 空位缺陷 拉曼光谱 密度泛函理论 纳米技术 分子 半导体 光电子学 化学物理 光学 计算化学 结晶学 化学 物理 有机化学
作者
Leilei Lan,Xingce Fan,Caiye Zhao,Juan Gao,Zhongwei Qu,Wenzhe Song,Haorun Yao,Mingze Li,Teng Qiu
出处
期刊:Nanoscale [Royal Society of Chemistry]
卷期号:15 (6): 2779-2787 被引量:21
标识
DOI:10.1039/d2nr06280a
摘要

As an emerging class of two-dimensional (2D) materials, MBenes show enormous potential for optoelectronic applications. However, their use in molecular sensing as surface-enhanced Raman scattering (SERS)-active material is unknown. Herein, for the first time, we develop a brand-new high-performance MBene SERS platform. Ordered vacancy-triggered highly sensitive SERS platform with outstanding signal uniformity based on a 2D Mo4/3B2 MBene material was designed. The 2D Mo4/3B2 MBene presented superior SERS activity to most of the semiconductor SERS substrates, showing a remarkable Raman enhancement factor of 3.88 × 106 and an ultralow detection limit of 1 × 10-9 M. The underlying SERS mechanism is revealed from systematic experiments and density functional theory calculations that the ultrahigh SERS sensitivity of 2D Mo4/3B2 MBene is derived from the efficient photoinduced charge transfer process between MBene substrates and adsorbed molecules. The abundant electronic density of states near the Fermi level of 2D Mo4/3B2 MBene enables its Raman enhancement by a factor of 100 000 times higher than that of the bulk MoB. Consequently, the 2D Mo4/3B2 MBene could accurately detect various trace chemical analytes. Moreover, with ordered metal vacancies in the 2D Mo4/3B2 MBene, uniform charge transfer sites are formed, resulting in an outstanding signal uniformity with a relative standard deviation down to 6.0%. This work opens up a new horizon for the high-performance SERS platform based on MBene materials, which holds great promise in the field of chemical sensing.
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