材料科学
光电子学
氧化铟锡
阳极
量子效率
红外线的
能量转换效率
有机发光二极管
二极管
量子点
亮度
发光二极管
光学
薄膜
纳米技术
图层(电子)
电极
化学
物理
物理化学
作者
Ji Hun Kim,Jong‐Yun Lee,Chanwoo Lim,Jiho Roh,Se‐Woong Baek,Woong Kim,Min Chul Suh,Hyeonggeun Yu
标识
DOI:10.1002/adfm.202214530
摘要
Abstract Infrared (IR)‐to‐visible up‐conversion device allows a low‐cost, pixel‐free IR imaging over the conventional expensive compound semiconductor‐based IR image sensors. However, the external quantum efficiency has been low due to the integration of an IR photodetector and a light‐emitting diode (LED). Herein, by inducing a strong micro‐cavity effect, a highly efficient top‐emitting IR‐to‐visible up‐conversion device is demonstrated where PbS quantum dots IR‐absorbing layer is integrated with a phosphorescent organic LED. By optimizing the optical cavity length between indium tin oxide (ITO)/thin Ag/ITO anode and semi‐transparent Mg:Ag top cathode, the up‐conversion device yields 15.7% of photon‐to‐photon conversion efficiency from the top‐emission. The high efficiency can be achieved under a low IR transmission through the semi‐reflective anode. Finally, pixel‐free IR imaging is demonstrated using the up‐conversion device, boosting the effect of micro‐cavity on the brightness and the contrast of an IR image.
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