期刊:Journal of materials chemistry. A, Materials for energy and sustainability [The Royal Society of Chemistry] 日期:2013-12-18卷期号:2 (8): 2478-2478被引量:59
标识
DOI:10.1039/c3ta14645f
摘要
We report a simple two-step fabrication process of 3D porous Si/copper films by an electrodeposition method using a hydrogen gas bubble template. A 3D porous Si/copper film provides a large surface area, a highly conductive pathway, a short ion diffusion length, and buffer spaces to accommodate the stress during the cycling processes.