激光器
激光束质量
光学
半导体激光器理论
梁(结构)
半导体
激光束
材料科学
光电子学
物理
作者
Yufei Zhao,Cunzhu Tong,Zhipeng Wei
摘要
Two 808 nm semiconductor lasers were combined by V-shaped spectral beam combining and locked at 798.8 nm, and 800.5 nm respectively. The outpower power and beam quality in the slow axis were improved significantly. The sum frequency of semiconductor lasers was realized based on the laser source. A laser with an output power of 6.5 W and beam quality of M2 = 2.2×18.5 was obtained by the spectral beam combining. The M2 in slow axis was improved by 30% and the combining efficiency was 83%. The 399.9nm sum frequency laser at a power of 18.3mW was obtained and the efficiency of sum frequency generation was 0.28%.
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