异质结
化学气相沉积
锗
材料科学
光电探测器
光电子学
基质(水族馆)
红外线的
比探测率
光子学
图层(电子)
微晶
薄膜
纳米技术
光学
响应度
硅
物理
地质学
冶金
海洋学
作者
Wenyu Lei,Xiaokun Wen,Guowei Cao,Li Yang,Pengzhen Zhang,Fuwei Zhuge,Haixin Chang,Wenfeng Zhang
摘要
We demonstrated a feasible strategy to fabricate MoTe2/Ge heterojunction by direct growth of Ge flake on a MoTe2 film substrate with a two-step chemical vapor deposition method. A thin transition layer (∼4 nm) mainly composed of polycrystalline germanium at the MoTe2/Ge interface was verified during the Ge flake growth. The MoTe2/Ge heterojunction-based photodetector exhibits both the response speed with a rise/fall time of 7/4 μs and the photoresponsivity and detectivity with 4.87 A W−1 and 5.02 × 1011 Jones under zero bias in the near-infrared regime, respectively. The characteristics of device performance imply its practical applicability as building block for potential near-infrared integrated photonics.
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