材料科学
中断
兴奋剂
光致发光
位错
蚀刻(微加工)
光电子学
基面
氮气
纳米技术
结晶学
复合材料
化学
图层(电子)
工程类
电气工程
有机化学
传输(电信)
作者
Virginia D. Wheeler,Brenda L. VanMil,Rachael L. Myers‐Ward,S. Chung,Yoosuf N. Picard,Marek Skowroński,Robert E. Stahlbush,Nadeemullah A. Mahadik,Charles R. Eddy,D. Kurt Gaskill
出处
期刊:Materials Science Forum
日期:2011-03-28
卷期号:679-680: 63-66
被引量:6
标识
DOI:10.4028/www.scientific.net/msf.679-680.63
摘要
The effectiveness of an in-situ growth interrupt in nitrogen doped 8° off-cut epilayers was investigated using ultraviolet photoluminescence imaging. Low-doped n-type epilayers (<1016 cm-3) exhibited an abrupt increase in BPD to TED conversion at the growth interrupt and achieved 96-99% conversion overall (< 10 BPDs/cm-2), while high-doped epilayers had minimal conversion at the interrupt (< 1%) and overall (< 30%). This large discrepancy suggests nitrogen prohibits or alters the conversion mechanism at the growth interrupt. Therefore, a novel SEM technique was developed to "freeze-in" the interface morphology and help elucidate the conversion mechanism. Preliminary results suggest that preferential etching at the point of BPD intersection with the surface is greatly reduced in highly doped layers, which inhibits the conversion mechanism.
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